System and method for memory control having adaptively split addressing of error-protected data words in memory transactions for inline storage configurations

ABSTRACT

A system and method are provided for controlling access to a memory device having adaptively split addressing of error-protected data words according to an inline memory storage configuration. An address translation section executes to convert a data address associated with a received command to inline data and inline error checking addresses corresponding thereto. Each data word&#39;s data and error checking bits are stored according to respective inline data inline error checking addresses. A segment of error checking bits is thereby offset in address from at least one segment of the same data word&#39;s data bits in a common chip of the memory device. A command translation section executes to convert between a received command to data access and error checking access commands for actuating respective access operations on the memory device. An error checking storage section intermediately stores error checking bits responsive to execution of the error checking access command.

BACKGROUND OF THE INVENTION

The subject system and method are generally directed to memory controllers for controlling access to memory devices for data words stored with both data bits and associated error checking bits. The system and method include measures for dynamically adapting memory transactions involving such error-protected data words in accordance with an inline memory storage paradigm. More specifically, the subject system and method provide for a memory controller that is executable to provide adaptively split addressing for different components of data words containing both data and error checking bits.

Memory controllers are well known in the art. They are implemented as digital circuits dedicated to controlling/managing the flow of data written to and read from one or more memory devices. They may be suitably formed as separate devices or integrated with a central processing unit or other main controller, and serve the memory storage and access needs of various control or user application ‘master’ operations processed thereby. Memory controllers implement the logic necessary to read from and write to various types of memory devices, examples of which include dynamic random access memory (DRAM), as well as electrically programmable types of non-volatile memory such as flash memory, and the like.

To minimize the consequences of data corruption due to random sources of error, various error checking measures for detection and/or correction are employed in the art for the storage and retrieval of data from memory devices. One example of the various known measures is the use of an Error Correcting Code (ECC) for detection and/or correction of error in data words. ECC measures are widely implemented in memory controllers heretofore known in various computer applications that may be particularly vulnerable to data corruption, or more generally in high data rate or other such applications where substantial immunity to data corruption is particularly important, and the added processing burden and complexity of ECC are not prohibitive. ECC measures generally involve adding redundant ECC bits to a transmitted data segment according to a predetermined code (of selected ECC format). These ECC bits are of parity-type, and permit the data segment to be properly recovered at the receiving end (by a receiving/recovery measures suitably configured for the given ECC format), even if certain correctable errors were introduced in the transmission or storage of that data segment. The degree to which the errors are correctable would depend on the relevant properties of the particular code being used.

Known memory controllers are widely configured for storage of such ECC-protected data according to the so-called sideband ECC storage format. They generally transmit, receive, and store data words. With increasing data speed and memory capacities, data word formats have grown to be defined by numerous multi-bit bytes. In typical ECC-protected memory controller applications, for example, a data word may be defined by 72 total bits, segmented into eight 8-bit data bytes and one 8-bit ECC byte (or one ECC bit for each 8-bit data byte). The multiple data bytes of each data word are often stored for high capacity applications in a memory device formed by a plurality of integrated circuit chips. Each data byte in those applications is stored in a different selectable chip, though at the same relative address within each chip. Sideband storage of ECC and data bits provides for an additional chip in which to store the ECC byte associated with the given data word's data bytes. The data word's ECC byte is then stored much like its data bytes—at the same intra-chip address as those data bytes, but in its designated sideband ECC chip(s). So in the case of a 72-bit data word (formed by 8 data bytes plus 1 ECC byte), for example, the data word is stored across nine selectable chips, eight for the data bytes and one for the associated ECC byte.

Memory transactions for reading and writing data to/from memory initiated by master control operations in many applications contemplate such sideband storage of ECC bytes with their associated data bytes. But a memory device sufficiently equipped to support sideband storage may not be available in certain applications, though the need for ECC protection for memory transactions remains. This may be due to various reasons in practice, reasons such as: form factor limitations, cost constraints, prohibitive memory technology, or the like. There is therefore a need for a memory controller system capable of dynamically adapting a memory transaction for inline storage configurations, where different portions of given data words are stored at different intra-chip addresses.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a system and method for memory control that adapts memory transactions for storage of error-protected data words in accordance with a non-sideband memory storage scheme.

It is another object of the present invention to provide a system and method for memory control that provides adaptively split addressing for different portions of error-protected data words for storage in accordance with an inline memory storage scheme.

It is yet another object of the present invention to provide a system and method for memory control that provides adaptively split addressing for data and error checking bits of a data word for respective inline storage thereof in a memory device.

These and other objects are attained in a system for controlling access to a memory device having adaptively split addressing of error-protected data words for memory transactions according to an inline storage configuration. The system includes an address translation section executing on a processor to convert a data address associated with a received command for each of the memory transactions to an inline data address and an inline error checking address corresponding thereto. Each data word includes a plurality of data bits stored in the memory device according to the inline data address and a plurality of error checking bits stored in the memory device according to the inline error checking address. A segment of error checking bits of a data word is thereby offset in address from at least one segment of data bits of the data word for storage access therewith in a common chip of the memory device. A command translation section executing on a processor to converts between the received command for each memory transaction to a data access command and an error checking access command for actuating respective access operations on the memory device corresponding to the received command. An error checking storage section intermediately stores the error checking bits of each memory transaction responsive to execution of the error checking access command provided therefor by the command translation section.

In accordance with certain embodiments, a memory controller system is provided, having adaptively split addressing for data bit and error correcting code (ECC) components of error-protected data words for memory transactions on a memory device configured for inline storage thereof. The system includes a command control portion executing on a processor to generate commands for actuating data access and ECC access operations corresponding to the memory transactions. The command control portion includes an address translation unit executing to map a data address associated with a received command for each of the memory transactions to corresponding inline data and inline ECC addresses for the memory device. Each data word includes a plurality of data bits stored in the memory device according to the inline data address and a plurality of ECC bits stored in the memory device according to the inline ECC address; and, a segment of ECC bits of a data word is thereby offset in address from at least one segment of data bits of the data word for storage access therewith in a common chip of the memory device. A command translation unit executes to map the received command for the memory transaction to corresponding data access and ECC access commands for actuating the respective data access and ECC access operations on the memory device. A data control portion coupled to the command control portion is configured to execute the data access and ECC access operations for selectively addressed storage locations defined in the memory device according to memory transactions of different type. An error control portion is coupled to the command control and data control portions for detecting error in a data segment as stored in the memory device based on the ECC bits thereof. The error control portion includes an ECC storage unit intermediately storing ECC bits of the memory transaction responsive to execution of the ECC access command provided therefor by the command translation unit.

In accordance with certain other embodiments of the present invention a method is provided for controlling access to a memory device with adaptively split addressing for data bit and error correcting code (ECC) components of error-protected data words of a memory transaction configured for inline ECC storage thereof. The method includes executing a command control portion on a processor to generate commands for actuating data access and ECC access operations corresponding to the memory transaction. The command control portion includes executing an address translation to map a data address associated with a received command for the memory transaction to corresponding inline data and inline ECC addresses for the memory device. Command translation is executed to map the received command for the memory transaction to corresponding data access and ECC access commands for actuating the respective data access and ECC access operations on the memory device. A data control portion is executed to carry out the data access and ECC access operations for selectively addressed storage locations defined in the memory device according to the memory transaction, with the data control portion being executable to carry out the data access and ECC access operations for memory transactions of different type. An error control portion is executed in cooperation with the command control and data control portions for detecting error in a data segment as stored in the memory device based on the ECC bits thereof. The error control portion intermediately stores ECC bits of the memory transaction responsive to execution of the ECC access command provided by the command translation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating an example of a sideband storage scheme for data and error checking components of error-protected data words in a memory device;

FIGS. 2A-2B are schematic diagrams illustrating different aspects of an example of an inline storage scheme for data and error checking components of error-protected data words in a memory device;

FIGS. 3A-3B are schematic diagrams comparatively illustrating differing aspects of memory control interface with a sideband storage scheme and with an inline storage scheme for data and error checking components of error-protected data words in a memory device;

FIG. 4 is a schematic block diagram illustrating a system formed in accordance with one exemplary embodiment of the present invention, operably intercoupled to provide control of memory to support processing of a master control operation, in one illustrative application;

FIG. 5 is a schematic block diagram showing certain portions of the system embodiment of FIG. 4, illustrating intercoupling with certain subsystems in one illustrative application;

FIG. 6 is a schematic diagram illustrating a mapping of a data address of a data word received for a memory transaction to an inline storage access address for error checking components of a data word in the embodiment of FIG. 4;

FIG. 7 illustrates an example of an incoming user address;

FIG. 8 illustrates another example of an invoming user address;

FIG. 9 is a schematic diagram illustrating a memory address of a data word of a memory transaction being indexed to an intermediate storage unit for error checking components of the data word;

FIG. 10A is a schematic block diagram illustrating a data path in a portion of the system embodiment of FIG. 4, during an inline storage read operation;

FIG. 10B is a schematic block diagram illustrating a data path in a portion of the system embodiment of FIG. 4, during an inline storage write operation;

FIGS. 11A-11C are state diagrams illustrating a progression of certain command sequences generated during operation of the system embodiment of FIG. 4; and,

FIG. 12 is a schematic block diagram illustrating an example of a command placement and selection during operation of a certain portion of the system embodiment of FIG. 4.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference is now made in illustrative level of detail to exemplary embodiments, which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to illustrate and explain the disclosed system and method with reference to the drawing figures.

Briefly, the subject system and method provide for a memory controller that is executable to dynamically adapting memory transactions involving error-protected data words in accordance with an inline memory storage configuration. The subject system and method provide for a memory controller that is executable to provide adaptively split addressing for different components of data words containing both data and error checking bits (such as ECC bits).

In an exemplary embodiment and illustrative application, the memory controller system is configured to control a memory device formed by a plurality of independently accessible/selectable integrated circuit (IC) chips, wherein one or a group of chips (enabled by the same chip select CS) of the memory device each defines a plurality of banks. Each bank is preferably organized in illustrative applications with its storage cells arrayed in rows and columns, with each row of storage cells of that bank preferably forming an individually accessible page of cells. Each selectable chip defines at least one selectable rank. In certain cases, a physical chip is suitably configured with multiple distinct storage units (such as front and rear sides of a double sided memory structure, or different stacked components of a 3DS stacked memory structure) respectively defining multiple, independently accessible/selectable ranks. Except to the extent their distinction is made applicable by the structural makeup of a given memory device, the terms chip and rank are used synonymously herein. Unless otherwise indicated, a chip or rank may be referred to herein by shorthand reference to the chip select (CS) designations by which they are addressed.

Depending upon its type and class, known memory devices typically define between 2 to 16 banks of memory. The banks of different devices are sized with widely varying numbers of pages, though typically ranging from 2¹² to 2¹⁸ pages of memory cells within each bank. In a typical DRAM memory device, only one page may be open at a time within each of its banks. Thus, in an 8-bank device, as many as 8 unique pages may be open at any given time, one page in each bank. To gain access to a different page within the same bank, the currently open page must first be closed before that different page may be opened.

In an exemplary embodiment and illustrative application, the memory controller is of a type suitably configured for Error Correcting Code (ECC) or any other such error checking techniques known in the art for error detection and/or correction employing designated error detection/correction bits (collectively referred to herein for brevity as “ECC,” unless specifically noted otherwise). Each ECC-protected data word is stored with additional ECC bits set according to a predetermined ECC format of suitable type (such as the so-called SECDED, or Single-Error Correcting and Double-Error Detection, type commonly used in the art).

During operation, the disclosed memory controller supports one or more control, or user application, operations executed on a central processing unit or other main controller (collectively referred to herein as ‘master’ operations or ‘master’ control operations), providing the memory storage and access needs of such master control operations. When data is written to memory for storage and later read out as prompted by a master control operation, ECC enables the memory controller to detect the occurrence of ‘soft’ errors in the data as stored—namely, those errors which cause a ‘flip’ of a bit value as the result of interference, radiation, or other such source of random error.

As noted, memory controllers in numerous conventional applications are configured for storage of ECC-protected data in the sideband ECC storage format/configuration. FIG. 1 schematically illustrates one example of such sideband storage, where a data word is defined by 72 total bits segmented into eight (8) bytes of data and one (1) byte of ECC associated therewith, each data/ECC byte being formed by eight (8) digital bits. As with other schematic views herein, FIG. 1 is view is shown for explanatory purposes and without regard to points of detail such as relative scales, precise interconnections, and the like. FIG. 1 illustrates just one of numerous examples, and ECC-protected data words may have any other suitable byte/bit length definitions for data words known in the art.

As shown, the sideband storage shown is supported by a memory device formed to include at least nine (9) selectively addressable chips: eight chips (CS0-CS7) for each data byte of a data word, one chip (CS8) for the associated ECC byte of the data word. Each chip CS0-CS8 defines a plurality of banks B₀-B_(n). The eight 8-bit data bytes of a data word are then stored in parallel in their respectively designated data chips (CS0-CS7), starting at the same bank and row/column addresses within their designated chips. The corresponding ECC byte of the data word is likewise stored effectively in parallel with the data bytes. The ECC byte formed by eight ECC bits associated with the eight data bytes are stored beginning at the same matching bank and row/column addresses within the designated ECC (or sideband) chip(s) (CS8). Memory transactions such as those for carrying out read, write, read-modify-write, and masked write operations may then be commanded with the same address applied concurrently for both the data bytes and their sideband-stored ECC bytes with respect to their respective chip selects.

In contrast, an inline approach to storing data and ECC bytes supported and enabled by the disclosed memory controller system provides for the systematic storage of ECC bytes along with data bytes, even when the available memory device is not adequately equipped or configured for such sideband storage of the ECC bytes. That is, the memory controller system provides adaptively for storage of the ECC bytes along with the data bytes in one or more of the chips available on a given memory device. That is, the ECC bytes are stored inline with the data bits, sharing memory space within one of more common chips with the data bytes. In certain exemplary embodiments and illustrations, for example, a portion of the memory storage locations available on a chip may be allocated for data bits and the remainder allocated for ECC bits. The available memory device chips may be shared for data and ECC bit storage according to a wide range of memory space configurations depending on such factors as data word size, the number and layout of available storage cells, and the like.

FIGS. 2A-2B illustrate one example of the numerous ways in which an inline storage configuration may be implemented to suit the particular requirements of the intended application. In this example, a 72-bit data word is again employed, but with a memory device having just the eight chips CS0-CS7 available to provide the memory space, without the benefit of a ninth dedicated sideband ECC chip. In the interests of brevity and clarity, the storage of data and ECC bytes with reference to one bank, namely bank B0, of the chips CS0-CS7 is schematically illustrated. As shown, the available memory space of each chip is sectioned according to a predetermined data-to-ECC ratio. In the illustrated case, a data-to-ECC ratio of 8 to 1 is employed with DRAM chips CS0-CS7, such that ⅞^(th) of each chip's available memory space is dedicated for data bits, while ⅛^(th) of the memory space is dedicated for ECC bits. In this sense, the available memory space is logically ‘partitioned’ to store ECC bits in that part of memory not accessible for storage of data bits. These dedicated partitions, or sections/regions, of memory storage cells may be selectively defined at mutually offset locations in terms of pages and/or banks within a shared chip select.

Although other ratios may be employed depending on the requirements of the particularly intended application, the 8-to-1 ratio provides for convenient mutual offsetting of addresses between data and ECC bits stored on the same chip. Adding three digital high values (111) and shifting a row address by 3 bits, for instance, provides a binary divide-by-8 effect for mapping ECC bits to a consistently offset storage address relative to their corresponding data bytes.

FIG. 2B schematically illustrates the physical storage scheme for the data and ECC bytes making up a set of data words. Memory data is transmitted for various applications in bursts containing numerous data words, and this set of data words may, for instance, constitute the data words of the same burst. In the case of data bytes, the eight data bytes of each data word in this example are physically stored in suitable manner across matching cells of the available chips for convenient logical addressing. Since eight chips CS0-CS7 are in fact available in the illustrated example, the 8-bit data bytes making up each data word are stored beginning at parallel/matching bank, row, and column locations across the chips CS0-CS7, much as in the sideband storage case illustrated in FIG. 1. The set of data words shown —namely, data words A (formed by constituent data bytes A₇, A₆, A₅, A₄, A₄, A₂, A₁, A₀, in most significant to least significant byte sequence), B, . . . , H (formed by data bytes H₇-H₀)—are each stored this way within the data section of the given bank.

For example, data bytes A₇-A₀ of data word A are each stored in the respective chips CS7, CS6, CS5, CS4, CS3, CS2, CS1, CS0 at the same matching bank B₀, row, and column locations. The data bytes of the next data word B are likewise stored in the respective chips CS7-CS0 at the same matching bank B₀, row, and column locations, but one columns location over from the data bytes of the preceding word A. The data bytes of the other sample data words C-H are similarly stored at matching bank, row, and column locations, successively located one column over from the preceding data word's data bytes.

As for the 8-bit ECC bytes A_(ECC), B_(ECC), C_(ECC), D_(ECC), E_(ECC), F_(ECC), G_(ECC), H_(ECC) generated by the memory controller system for the eight data words A-H, they are physically stored in this example starting preferably from the same chip, bank, and column location aligned with the first stored data byte of the data word A (of the given burst), but offset in row location from that data byte so as to be disposed in the adaptively established ECC section of the given bank. The ECC bye of the next data word B is then stored in the same bank of the next chip over, at the first available column location (which matches the column location aligned with the data byte of the first data word), but offset in row location so as to be disposed in the ECC section of the given bank of the given chip. The ECC bytes of the remaining data words C-H are similarly stored at corresponding locations in successive ones of the other chips as shown. In certain applications, the bank location within the same chip may be offset as well, so as to optimize performance, since rows/pages of a given bank in many applications may only be opened one at a time.

FIG. 2A schematically illustrates a logical storage scheme reflecting the physical storage scheme shown in FIG. 2B. In this example, no bank offset is employed between the inline-stored data bytes and their associated ECC bytes. Hence, when the distributed contents of bank B₀ across the chips CS0-CS7 of FIG. 2B are combined in the collective bank B₀ as shown, the data words A-H are effectively stored in successive 64-bit cells within a row of the data section defined in the collective bank B₀. The eight 8-bit ECC bytes A_(ECC)-H_(ECC) associated with those data words A-H are stored in the 64-bit cell mutually offset from the data word A, so as to be disposed in the ECC section defined in that collective bank B₀. Inline storage may progress in this manner with the data and ECC bytes of the next set of data words.

FIGS. 3A-3B more conceptually illustrate the differences between sideband and inline approaches to storing data and ECC bytes. In the sample implementation shown, the sideband ECC approach of FIG. 3A stripes a single data word (again, 64-bits of data or 8 bytes) plus ECC (8-bits or 1 byte) across a single 72-bit data bus interface. With inline ECC approach of FIG. 3B, the topological requirement for additional sideband ECC memory alongside data memory is removed, and an ECC byte is stored inline with the data byte at a different location in memory. The memory capacity overhead may be similar in both cases; however, the ramifications for memory operations, functionality, and performance are significant in practice.

Such inline storage of ECC bytes with their data bytes offers an attractive, reliable alternative where, despite the benefits of its simplicity, sideband storage of ECC-protected data is not viable. The memory device(s) actually available for storage may not be adequately equipped to support such sideband storage of both data and ECC bytes in all applications. As noted, form factor, memory technology, cost, and other prohibitive factors may not permit the allocation of a dedicated chip(s) for ECC byte storage that sideband storage normally requires, though the unmitigated need for error-protection of the data words in the memory transactions persists.

Referring now to FIG. 4, there is shown a general schematic diagram illustrating a memory controller system 1 formed in accordance with one exemplary embodiment of the present invention operably intercoupled with other subsystems in an illustrative application. As generally shown, the memory controller system 1 serves to provide control of a memory 5 (formed by one or more memory devices of any suitable type and configuration known in the art) to support processing of a master control operation by a master controller 2. The memory controller system 1 communicates with the master controller 2 through one or more user interface ports 3, and with the memory device(s) 5 through a physical interface (PHY) 4 configured with a suitable interface standard known in the art for the memory 5.

The overall system schematically illustrated in FIG. 4 may be implemented in any known form, depending on the particular requirements of the intended application. For example, the overall system may be realized by discretely interconnected subsystems, or sufficiently integrated in the form of a system-on-chip (SOC) or the like, depending again on the particular requirements of the intended application. As the master controller, user interface port, PHY, and memory subsystems 2, 3, 4, and 5 may be of any suitable type and configuration known in the art, subject to the particular requirements of a given application, no further description thereof is needed for description of features relating to the memory controller system 1. Those skilled in the art will recognize that the overall system shown will typically include numerous subsystems, logic components, driver circuit portions, and the like other than those generally illustrated in FIG. 4 to carry out particularly intended functions. In the interests of brevity and clarity, those particular functions outside the system and method disclosed herein are not shown, but will be apparent to those skilled in the art in the context of the particular application intended.

Memory controller system 1 generally includes a command control portion 10 coupled to a data control portion 20 and an error control portion 30. In the embodiment shown, the data control portion 20 preferably includes one or more digital circuits which implement the functional logic to carry out a plurality of data access operations on memory 5. These data access operations include read, write, masked write, and read-modify-write (RMW) operations conducted on selectively addressed storage locations defined in the memory 5. The data access operations preferably include control of additional functions for proper interface with the particular type of memory device(s) 5 employed, as well as others known in the art.

The error control portion 30 is operably coupled to the data control portion 20, and preferably includes one or more digital circuits which implement the functional logic for detecting and correcting error in data segments as stored in memory 5. The error control portion 30 preferably includes execution of ECC processing of predetermined code format, such as a format of SECDED type, to detect error in a corrupted data segment read from the memory 5. The error control portion 30 is configured to correct the data segment read from the memory having error that is correctable with the given ECC, and report (for the master control operation) those data segment errors which are detected but are not correctable with the given ECC. The error control portion 30 preferably also provides intermediate storage of ECC bytes generated or read in association with data bytes during the execution of various data access operations, for cooperative transmission with their data bytes either to the PHY 4 (for writing operations) or error-checking of retrieved data for return to the user interface ports 3 (for reading operations).

The command control portion 10 is operably coupled to both the data control and error control portions 20, 30. The command control portion 10 is preferably formed by one or more digital circuits which implement the functional logic for generating commands to actuate various data access operations of the data control portion 20. The command control portion 10 preferably includes suitable units for carrying out memory access operations responsive to memory transactions of user applications involving ECC-protected data words. These include address translation and command translation functions involved in adaptively splitting the memory addressing of ECC and data for inline ECC storage configurations.

Referring to FIG. 5, there is shown a schematic diagram illustrating the intercoupling of certain functional units for carrying out the adaptation to inline ECC storage configurations in the memory controller system 1, as formed in accordance with one exemplary embodiment of the present invention. In the interests of brevity and clarity, only certain parts (units/modules/sections) of the overall memory controller system 1 are schematically shown. The functional units are each shown in the disclosed embodiment implemented as parts of certain command control, data control, and error control portions 10, 20, 30, but each functional unit may be suitably implemented as part of a different system portion in alternate embodiments, depending on the particular requirements of the intended application.

In FIG. 5, only those parts of the overall command control portion 10 pertaining to the adaptation of memory controller system 1 for inline ECC storage are illustrated. Other parts of the command control portion 10, as well as of the other portions 20, 30 of the memory controller system 1, which are not shown or specifically described may be of any suitable type known in the art configured to suit the particularly intended application. The particular details of such other parts and portions will be apparent to those skilled in the art.

In accordance with certain aspects of the present invention, the command control portion 10 of the memory controller system 1 incorporates an adaptation capability that is integrated to the extent practicable to make use of the memory controller system's other conventional capabilities. This includes known memory controller systems' use of control and execution logic for ECC, address shifting between user and memory-specific addresses, and address/command generation for data words.

In the exemplary embodiment and application illustrated, the master control operation issues memory transactions in the form of commands for certain data words to be operated on and the addresses for those data words. These addresses and commands are typically received in the master control operation's formatting by the command control portion 10 through the user interface ports 3. When such addresses and commands are received, the command control portion 10 executes to among other things determine the proper memory access addresses respectively for the data and ECC components (upon generation or upon retrieval from memory) of the data words in question. Based on the resulting data and ECC access addresses, the received commands are split to generate a sequence of multiple commands, at least one for the data component, and at least one for the ECC component. The data address is suitably translated to generate separate, mutually offset data and ECC access addresses, which correspond to separate commands for the data and ECC components of the data words in question. The translated addresses are compatible with the particular inline storage configuration employed, with the data and ECC components sharing the memory space available on the chips of the given memory device 5.

The data words of memory transactions in questions are passed within the memory controller system 1 to the error control portion 30. The error control portion 30 includes an error correcting unit 300 preferably implementing a suitable error detection and correction technique employing an ECC known in the art, of predetermined format. The error control portion 30 also includes an error storage unit 310, which in the embodiment shown is implemented in the form of an ECC buffer. During write operations of the memory transactions, associated ECC components are generated for the data words received from the master control operation through the user interface ports 3 by the error correcting unit 300. The ECC components of the data words are intermediately stored in the ECC buffer 310 until accumulated for all data components of the given write operation. When drawn from the ECC buffer 310 thereafter, the associated ECC components and the data components emerging from the error correcting unit 300 are at that point addressed separately and subjected to separate write commands for mutually offset inline storage in the memory device 5. They are passed to one or more suitable memory access interface units 200 (of the data control portion 20) for passage to the PHY.

During read operations of the memory transactions, the separately addressed data and ECC components of the data words are read through separate read commands from their mutually offset inline stored locations in the memory device 5, responsive to the translated data and ECC addresses and commands received for execution from the command control portion 10. The data components read from the memory device 5 are passed through the memory access interface units 200 to the error correcting unit 300, and the associated ECC components read from the memory device 5 are passed through the memory access interface units 200 and intermediately stored in the ECC buffer 310 until the data components of the given read operation are read and ready for error check. The ECC components are then passed from the ECC buffer 310 to the error correcting unit 300 for error checking of the associated data components. The checked (and possibly corrected) data words are returned to the master control operation through the user interface ports 3.

Turning in more detail to the command control portion 10, the portion includes in the illustrated embodiment a command queue unit 110 which receives commands generated by a command split unit 100, and from which a strategy execution unit 120 draws commands for timely execution. The command queue unit 110 receives and registers commands from not only the master control operation (through user interface ports 3 and command split unit 100), but also from other functional units not shown. Depending on the particular application, these include for example a built-in-self-test (BIST) unit, a scrubbing engine, and the like. The command queue unit 110 receives and queues up the respective data and ECC commands translated by the command split unit 100 from the command received from the master control operation.

In accordance with certain aspects of the present invention, the command split unit 100 implements the functional logic for restructuring and modifying the commands and associated addresses it receives. The unit provides the necessary translation of incoming addresses/commands for data words to adaptively suit inline storage of associated ECC and data components in the available memory device 5. The command split unit 100 thus includes an address translation section 102 and a command translation section 104. The address translation section 102 executes to apply a predefined mapping scheme to the data address received in user addressable space, and map to separate addresses in memory addressable space for the data component and for the ECC component (generated or retrieved in the memory controller system 1) of each data word. This address translation to obtain separate data and ECC access addresses is preferably carried out in addition to existing address shifting measures generally for data accesses, by which address is thereby translated to an address defined in terms of device-specific address parameters of the given memory device (to reflect the row, column, page, or other such storage cell arrangement/organization thereof).

As noted herein, communications traffic in the illustrated embodiment includes commands and data which are preferably transmitted in burst mode for heightened data throughput. Among other things, the command split unit 100 preferably executes to enforce a predefined burst limit (set to a burst limit of one in the illustrated embodiment) for each command entered in the command queue unit 110. The unit preferably also executes to confirm acceptance of each command entry which satisfies the burst limit condition.

The command translation section 104 executes to evaluate incoming commands to determine if they include a read, write, or read-modify-write data access operation based on address, length, and availability of data masking. The received commands are further evaluated to determine if the associated ECC access of the command includes a read, write, or read-modify-write operation based on similar criteria applicable to the ECC access. Based on such determinations, the received commands are split, or decomposed, into corresponding command sequences. For inline ECC storage, the sequences include additional ECC read and/or write commands that are suitably generated as required from the received commands. The command translation unit implements suitable logic to split incoming commands accordingly into the appropriate set of data commands and generate their associated ECC commands—such as reads, writes, and read-modify-writes. Suitable command placement measures are preferably implemented in the command queue unit 110 to ensure that these command sequences containing matched data and ECC commands are executed as in-order sequences that cannot be interrupted by other commands.

The command control portion 10 preferably includes as well a strategy execution unit 120 coupled to the command queue unit 110. The strategy execution unit 120 implements the functional logic to selectively direct command entries accepted into the command queue unit 110 to corresponding parts of the error control and data control portions 20, 30 for timely execution thereby. The strategy execution unit 120 serves in the meantime to hold the accepted command entry under execution. It preferably issues the accepted commands of the command queue unit 110 burst by burst.

As noted herein, the memory controller system 1 preferably accommodates 3DS device applications. In these applications, the memory device(s) is configured with a stacked device structure having at least one multi-level stack of component chips, where for instance each selectable chip stack (addressed by a corresponding CS) includes one or more selectable chips addressed by a corresponding chip identity (CID). A 3DS memory device thus necessitates an additional decode field in the address for the CID, which selects a particular sub-device within a stack, all sub-devices within a stack (2, 4, or 8 sub-devices) defining a single chip select (CS). For inline ECC address decoding, the ECC boundary for 3DS devices is preferably defined on a CS boundary (as opposed to a CID boundary).

The CID bits are combined with the upper Row bits as required to create a 3-bit ECC data storage address range and cross over point to the next CS. Since for 3DS, the CID bits are disposed at the top of the address, the CID bits constitute the MSB bits for the 3-bit decode used to define the ECC address space. The remaining bits of the 3-bit address are filled in according to the necessary number of top Row address bits. The CID may span 1, 2, or 3 bits, so the necessary Row address bits may be 2, 1, or 0 respectively. This means that the ECC is necessarily stored in the upper CID. Consequently, data and ECC are generally not stored in the same CID except for the fraction of the upper CID memory that is not used for ECC. The timing is not significantly different when accessing the same CID verses a different CID in typical applications, so the performance impact of storing ECC in this manner tends to be minimal.

Certain of the features as preferably incorporated by exemplary embodiments of the memory controller system 1 shown are described in greater illustrative detail as follows.

Address Mapping/Translation

In order to provide a contiguous address space, the ECC memory storage is preferably mapped out of the user address space. With the memory space available in the memory device 5 logically partitioned as disclosed in the illustrated embodiment, the ECC bits are stored in the upper ⅛^(th) region of the memory space within each chip select of the device. As the ECC storage space in this dedicated region fills, the addressing is preferably configured to roll-over from one chip select to the next on a non-power-of-2 boundary. Suitable measures may be necessary in certain applications to reconcile non-power-of-2 memory devices to the address granularity needed to support inline ECC storage (requiring in this example decoding of the upper 3-bits in the address within each chip select).

Preferably, ECC bit storage is done on a per chip select (CS) basis, such that when the upper 3-bits of the address within a chip select are set to 3′b111 (that is, the 3 binary MSB's are set to the values: 1 1 1), the address points to a location within the partitioned ECC region of the memory space. All other addresses point to location within the data region of the memory space outside this partitioned ECC region. The user memory decode rolls over to the next chip select when the ⅞^(th) boundary is crossed, and for systems with more than 2 chip selects, the boundary preferably requires similar decoding at each boundary— 14/8^(th) boundary, 21/8^(th) boundary, etc. Inline ECC storage preferably involves translation of the user address to memory device address which goes beyond just masking, splitting, and/or concatenation of user address bits, as the user address for a specific CS may start at a non-power-of-two page address to avoid gaps in the user address space.

Inline ECC storage preferably also involves one or more ECC memory accesses for each user initiated command. The address and length of the ECC memory accesses are suitably computed from the user address and length. This entails translation of the row address, column address, datapath address, and chip level CID (for stacked 3DS devices). The bank address is typically not changed, unless a suitable bank offset is selectively enabled for optimized performance.

FIG. 6 schematically illustrates the new address computation involved in translating from the received data address (which in this example remains the inline address for the data) to an inline address for the ECC bits of the given data word. In this schematic illustration, the ECC bit associated with the first 8-bit data byte (of the 8 total data bytes) for the data word is mapped as the first of the 8 bits making up the ECC byte for the data word at a different row address. In this example, bank offset is enabled, such that the ECC byte is stored in a different bank from its corresponding data bytes. As indicated by the arrows, the ECC bit associated with the next of the 8 data bytes for the same data word is accordingly mapped as the next one of the 8 bits making up the same ECC byte.

In this manner, the ECC bits associated with the data bytes of a given data word are stored at select locations—within the upper ⅛^(th) of the row address space, for example—with either the same CS and bank, or with shifted bank (if bank offset is enabled). An index is preferably computed from the row, column, and data path. All addresses with the 3 MSB bits set to 3′b111 are thereby reserved in this illustrative example for inline storage of ECC bits.

Bank Offset:

For Inline ECC using the ECC address translation of the illustrated example, the data and ECC naturally align to the same bank, different row. This yields row contention within the bank, since normally at most one page (typically defined by a row) may be opened at any given time within a bank. This would require opening and closing pages when switching back-and-forth between ECC and data commands that need to remain atomic, in-order, operations. To prevent this inherent inefficiency, enabling a bank offset places the ECC and data bytes of the same data word in different banks (preferably of the same chip select).

Example 1: Inline ECC Partitioned Address Mapping

In this example, the system user data address width is 32 bits, and is split into the fields/values shown below, with the following sample conditions:

-   -   The MAX numbers of ranks configured is 2, requiring 1 CS bit.     -   The system is interfacing to both ranks.     -   Configured address order is: CS, ROW, BANK     -   The remaining address field MAX and actual bits per field are as         defined in the following table.

Address Field MAX ACTUAL Data path 3 3 Column 10 10 Row 15 15 Bank 3 3 Chip Select 1 1

FIG. 7 illustrates an example of an incoming user address with respect to Example 1.

The lowest user addresses are mapped to CS0. The next highest contiguous user addresses are mapped to CS 1. Inline ECC storage is configured to store ECC bytes of data words in ⅛^(th) of the address space of both CS0 and CS1. CS0 is organized to start at user address location 0000_0000_. . . and cover up to location 0110_1111_. . . since the MSB of the row address bits will only go up to “110” instead of “111” like non-inline ECC power-of-2 memories. CS1 is therefore configured to begin at location 0111_0000_. . . , to avoid having a hole in the user address space.

1111_1111_1111_1111_1111_1111_1111_1111 Out of range 1110_0000_0000_0000_0000_0000_0000_0000 1101_1111_1111_1111_1111_1111_1111_1111 CS1 0111_0000_0000_0000_0000_0000_0000_0000 0110_1111_1111_1111_1111_1111_1111_1111 CS0 0000_0000_0000_0000_0000_0000_0000_0000

User address 0111_0000_. . . represents CS1's location 0, so a translation must occur in the row address and chip select, since the row address is not 000_0000_0000_0000, and the CS is not 1. The following table illustrates samples of user addresses and how they are mapped to memory addresses (CS, ROW, BANK, COL, Datapath) for this example.

31 31 30 16 15 13 12 3 2 0 CS ROW BANK COLUMN Data Path #1.1 User 0 000_0000_0000_0000 000 0_0000_0000 000 DRAM 0 000_0000_0000_0000 000 0_0000_0000 000 ECC 0 111_0000_0000_0000 000 0_0000_0000 000 #1.2 User 0 010_0000_0000_0000 000 0_0000_0000 000 DRAM 0 010_0000_0000_0000 000 0_0000_0000 000 ECC 0 111_0100_0000_0000 000 0_0000_0000 000 #1.3 User 0 110_1111_1111_1111 111 1_1111_1111 111 DRAM 0 110_1111_1111_1111 111 1_1111_1111 111 ECC 0 111_1101_1111_1111 111 1_1111_1111 111 #1.4 User 0 111_0000_0000_0000 000 0_0000_0000 000 DRAM 1 000_0000_0000_0000 000 0_0000_0000 000 ECC 1 111_0000_0000_0000 000 0_0000_0000 000 #1.5 User 1 000_0000_0000_0000 000 0_0000_0000 000 DRAM 1 001_0000_0000_0000 000 0_0000_0000 000 ECC 1 111_0000_0000_0000 000 0_0000_0000 000 #1.6 User 1 101_1111_1111_1111 111 1_1111_1111 111 DRAM 1 110_1111_1111_1111 111 1_1111_1111 111 ECC 1 111_1011_1111_1111 111 1_1111_1111 111 #1.7 User 1 110_0000_0000_0000 000 0_0000_0000 000 DRAM OUT OF RANGE ADDRESS ECC

These address translations illustrate that the CS bit and the most significant three row bits of the memory address may not always equal the corresponding user address bits. The memory controller system 1 is equipped with suitable logic to handle this translation and updates to any calculations such as the next CS or next page to carry out the necessary inline ECC partitioned memory address translation. However, the bank, column, datapath and all row bits except the MSB, MSB-1 and MSB-2 will equal the user address and require no translation, as they point to data storage regions of the chip selects. The memory controller system's existing logic to convert a user address to an internal controller address (for filling in 1's in unused bits when necessary) preferably remains unchanged.

Furthermore, ECC address translations illustrate that the most significant three row bits of the DRAM address are fixed to 3′b111 for the ECC storage. The CS and the bank may remain unchanged from the data address (again, unless bank offset is enabled). The row, column, and datapath are shifted to calculate the associated ECC address for an ECC command to correspond to each data command.

Below is a table illustratively summarizing the mapping from a received data storage address to inline ECC storage address for certain sample signals:

Data Address Inline ECC Address Chip Data Chip Data Select Row Bank Column Path¹ Select Row Bank² Column Path¹ 0 16′h0000 3′b111 10′h000 1′b0 0 16′hE000 3′b001 10′h000 0 0 16′h0001 3′b111 10′h004 1′b0 0 16′hE000 3′b010 10′h001 1 0 16′h0008 3′b010 10′h1A4 1′b0 0 16′hE001 3′b011 10′h034 1 0 16′h1A85 3′b101 10′h158 1′b0 0 16′hE350 3′b110 10′h2AB 0 0 16′h2004 3′b110 10′h110 1′b0 0 16′hE400 3′b111 10′h222 0 0 16′h8000 3′b000 10′h000 1′b0 0 161hF000 3′b001 10′h000 0 0 16′hDFFF 3′b100 10′h3FC 1′b0 0 16′hFBFF 3′b101 10′h3FF 1 1 16′h1248 3′b011 10′h0FC 1′b0 1 16′hE249 3′b100 10′h07F 1 1 16′hCA0B 3′b111 10′h3FC 1′b0 1 16′hF941 3′b000 10′h1FC 1 ¹Example data path = 2 bytes. ²Bank offset set to +1

Example 2: Inline ECC 3DS Partitioned Address Mapping with CID

In this example, the system user data address width is 34 bits, and is split into the fields/values shown below, with the following sample conditions:

-   -   The MAX numbers of ranks configured is 2, requiring 1 CS bit.     -   The MAX number of CIDs configured is 2, requiring 2 CID bits.     -   The system is interfacing to both ranks.     -   Configured address order is: CS, CID, ROW, BANK     -   The remaining address field MAX and actual bits per field are         defined in the following table.

Address Field MAX ACTUAL Data path 3 3 Column 10 10 Row 15 15 CID 2 2 Bank 3 3 Chip Select 1 1

FIG. 8 illustrates an example of an incoming user address with respect to Example 2.

The lowest user addresses are mapped to CS0. The next highest contiguous user addresses are mapped to CS 1. Inline ECC storage is configured to store ECC bytes of data words in ⅛^(th) of the address space of both CS0 and CS1. CS0 and CS 1 are split across 4 CID's each, and the MSB's for each CS are formed by the 2 CID's and the MSB of the row address. The ECC bytes, which take up ⅛^(th) of the CS's total memory, are stored in the upper half of CID3. CS0 is organized to start at user address 00_0000_0000_. . . and extend up to location 01_1011_1111_. . . since the MSB of the CS address bits will only go up to “110” instead of “111” like non-inline ECC memories. CS1 will therefore begin at location 01_1100_0000_. . . , to avoid a hole in the user address space.

11_1111_1111_1111_1111_1111_1111_1111_1111 Out of range 11_1000_0000_0000_0000_0000_0000_0000_0000 11_0111_1111_1111_1111_1111_1111_1111_1111 CS1, CID3 11_0100_0000_0000_0000_0000_0000_0000_0000 11_0011_1111_1111_1111_1111_1111_1111_1111 CS1, CID2 10_1100_0000_0000_0000_0000_0000_0000_0000 10_1011_1111_1111_1111_1111_1111_1111_1111 CS1, CID1 10_0100_0000_0000_0000_0000_0000_0000_0000 10_0011_1111_1111_1111_1111_1111_1111_1111 CS1, CID0 01_1100_0000_0000_0000_0000_0000_0000_0000 01_1011_1111_1111_1111_1111_1111_1111_1111 CS0, CID3 01_1000_0000_0000_0000_0000_0000_0000_0000 01_0111_1111_1111_1111_1111_1111_1111_1111 CS0, CID2 01_0000_0000_0000_0000_0000_0000_0000_0000 00_1111_1111_1111_1111_1111_1111_1111_1111 CS0, CID1 00_1100_0000_0000_0000_0000_0000_0000_0000 00_0111_1111_1111_1111_1111_1111_1111_1111 CS0, CID0 00_0000_0000_0000_0000_0000_0000_0000_0000

User address 01_1100_0000_. . . forms CS1's location 0. A translation must occur in the row address, CIDs, and chip select, since the row address is not 00_000_0000_0000_0000 and the CS is not 1. The table illustrates samples of user addresses and how they are mapped to memory addresses (CS, CID, ROW, BANK, COL, Data Path) for this example.

33 33 32 31 30 16 15 13 12 3 2 0 CS CID ROW BANK COLUMN Data Path #2.1 User 0 00 000_0000_0000_0000 000 0_0000_0000 000 DRAM 0 00 000_0000_0000_0000 000 0_0000_0000 000 EEC 0 11 100_0000_0000_0000 000 0_0000_0000 000 #2.2 User 0 01 010_0000_0000_0000 000 0_0000_0000 000 DRAM 0 01 010_0000_0000_0000 000 0_0000_0000 000 EEC 0 11 101_0100_0000_0000 000 0_0000_0000 000 #2.3 User 0 11 011_1111_1111_1111 111 1_1111_1111 111 DRAM 0 11 011_1111_1111_1111 111 1_1111_1111 111 EEC 0 11 111_0111_1111_1111 111 1_1111_1111 111 #2.4 User 0 11 100_0000_0000_0000 000 0_0000_0000 000 DRAM 1 00 000_0000_0000_0000 000 0_0000_0000 000 EEC 1 11 100_0000_0000_0000 000 0_0000_0000 000 #2.5 User 1 00 000_0000_0000_0000 000 0_0000_0000 000 DRAM 1 00 100_0000_0000_0000 000 0_0000_0000 000 EEC 1 11 100_1000_0000_0000 000 0_0000_0000 000 #2.6 User 1 10 100_1111_1111_1111 111 1_1111_1111 111 DRAM 1 11 000_1111_1111_1111 111 1_1111_1111 111 EEC 1 11 111_0001_1111_1111 111 1_1111_1111 111 #2.7 User 1 11 000_0000_0000_0000 000 0_0000_0000 000 DRAM OUT OF RANGE ADDRESS EEC

For 3DS applications, The CID selects the particular sub-device (such as DRAM) within a stack selected by the chip select (CS). For the purposes of Inline ECC address decode, the CID is treated like the upper most Row address bits. Therefore, the ECC data is always stored in the highest CID, and decode depends on the width of the CID—1, 2, or 3 bits. The CID bits are thus combined with the upper Row address bits as needed, to serve as the upper 1-3 bits of the address within a chip select. The same address translations are applicable as with the Row address for the non-3DS case. Since the CID may be of 1, 2, or 3 bits for 2, 4, or 8 high 3D stacks, the upper 3-bits may defined as any of the following:

-   -   ROW[MSB:MSB-2]     -   CID[0], ROW[MSB:MSB-1]     -   CID[1:0], ROW[MSB]     -   CID[2:0]

Below is a table illustratively summarizing the mapping from a received 3DS data storage address to inline ECC storage address for certain sample signals:

Data Address Inline ECC Address Chip Data Chip Data Select CID Row Bank Column Path¹ Select CID Row Bank² Column Path¹ 0 2′h0 16′h0000 3′b111 10′h000 1′b0 0 2′h3 16′h8000 3′b001 10′h000 0 1 2′h2 16′hCA0B 3′b111 10′h3FC 1′b0 1 2′h3 16′hD941 3′b000 10′h1FC 1 ¹Example data path = 2 bytes. ²Bank offset set to +1 ³CID = 2 bits

Row Translation:

Row translation in connection with inline ECC storage is carried out for both the data component row address and the ECC component row address pertaining to a data word. For data addresses, CS's above CS0 will generally start at a user row address offset from an all zero row address. In the initial example, CS1 starts at user address location 0111_0000_0000_0000_0000_0000_0000_0000, and with a CS WIDTH of 1, its user row address starts with 111_0000_0000_0000 instead of 000_0000_0000_0000 as shown in Example #1.4. Hence, the row translation logic employed serves to map the incoming user data address value to a different row address value in the memory device. For the corresponding inline ECC address, the 3 row address MSB's are preferably set to 3′b111, and the remaining row address bits are shifted to the right by 3 bit locations. The initial row address is thereby effectively divided by 8. For 3DS applications, the translation applies to the CID's and upper row address bits as necessary. The ECC row address is computed based on the translated data row address, and does not require further partitioned memory address translation.

The row address translation for the data component of a data word is isolated to the three most significant row bits. All other bits of the row field of the user address may be passed along to the memory device without translation. Suitable logic for padding internal controller addresses with 1 value is executed as needed to compensate for maximum address widths that may be used by the system internally.

As noted, the address translation between received data address and inline data and ECC access addresses disclosed herein is distinct from the address shifting conventionally employed (such as typically implemented in the user interface ports 3) for converting a packed byte address received from the user into a shifted byte address that is used internally by the memory controller system. The address shift logic preferably uses suitable configuration options and programmable registers to effect the address shift required. An address typically contains chip select, row address, bank address, column address, and data path (or memory byte) information combined into one address signal. An address shift module takes this information and reorganizes it into a shifted address formed by fixed fields with the given information suitably partitioned. The shifted address is then expanded so that all of the information is available in fixed locations based on the maximum supported width of each field. This resulting address is sent to the various modules of the given system where the required fields are easily indexed.

Since the maximum field widths are typically not all in use during operation, the unused bit locations are packed with 1's so that operations executed on the address will automatically carry to the next field. In the address translation carried out for inline ECC storage, the address mapping for ECC memory access is modified compared to the address for the associated data memory access. In order to shift row addresses to column addresses, and the like, re-mapping is preferably carried out on the unshifted address before adding the masking, etc.

The shifted ECC access address is preferably modified relative to the data address as follows. ECC column and datapath addresses are computed by shifting the data address (divide by 8) and shifting the lower row address bits to the top of the column. ECC split page (row) addresses are computed by shifting the data page address (divide by 8) and setting the upper row address bits to the appropriate ECC storage address values. For ECC reads, the address is aligned to a burst boundary, and the ECC length adjusted accordingly so that the ECC read spans the full length of the corresponding data command. ECC reads are preferably executed as full burst commands and cannot be optimized, so the command is simplified. However, the corresponding length is properly computed to include the correct number of bursts necessary. For ECC writes, the address is accurately computed for the corresponding byte associated with the data command. This may be done already for existing write transactions where data masking is available, and the ECC write properly updates the ECC to the byte address.

Command Translation

Read and write commands received at the user interface ports 3 may be from 1-byte in length to a certain other maximum command length supported by the particularly intended application. Commands are sub-divided in the command split unit 100 based on factors such as page boundary crossings, wrap commands, read-modify-write commands, etc. Since commands are normally split on page boundaries (for example, every 1K bytes), inline ECC storage is preferably sized to allow ECC bits to be fetched for up to a page of associated data bits in order to maintain this boundary and avoid introducing extraneous boundary conditions in connection with inline ECC storage conversion.

The commands involving read and write received through the user interface ports 3 are translated into a combination of read, write, and read-modify-write operations for both the data and ECC components of the error-protected data words to be operated on. The following tables summarize the commands and associated translations for various examples of user commands (shown by way of example, without limitation thereto).

Read Commands:

Received user read commands are translated to both a data read and an associated ECC read for the data word(s) in question. For a read operation, the ECC component of a data word is preferably read first and the resulting ECC check bytes stored, then the data component reads are executed. The ECC read stores the ECC check bytes for up to a page of data bytes—or up to the maximum command length supported in the command queue unit 110.

TABLE Read Command Translation Received Command Command Sequence Notes Reads Read - 1 byte to 8 RD-ECC, A single ECC read gets enough memory bursts not RD-DATA data for up to 8x aligned read crossing an ECC data. data group boundary Read crossing an RD-ECC, A read up to a page will ECC data group RD-DATA generate an ECC read of all of boundary within the necessary ECC components a single page for the entire read command Read crossing a RD-ECC0, A read that crosses a page page boundary RD-DATA0 boundary is normally split. The RD-ECC1, corresponding ECC reads are RD-DATA1, etc. accordingly split on the boundary, and the ECC buffer holds ECC for a single page of memory. Wrap read RD-ECC, A wrap read must remain RD-DATA within a page. ECC for the entire wrap command is read first followed by the wrapped read data command

Write Commands with Masking:

With inline ECC storage employed in the particular example illustrated, write commands of less than 8 bytes of data aligned to an 8 byte boundary would require a read-modify-write to ensure the minimum data necessary to update the associated data byte. In order to verify that the read data being used to calculate the new ECC is correct, the associated ECC byte(s) must also be read and ECC verified. Single-bit errors would need to be corrected, and multi-bit errors would require that the new ECC be corrupted to maintain the error recognition.

For commands that require an ECC read, the subsequent ECC write may be executed as a masked write or, optionally, as an unmasked ECC write by combining the new ECC byte with the data read for the read data check. For consistency with the unmasked case, the data that is read is maintained for the write regardless of whether masking is used or not. Writes that exceed 8 bytes aligned to an 8 byte boundary do not require the data and ECC reads since the entire location will be overwritten. For long write sequences, the data words are accumulated in a write buffer and written at the end of the write sequence. The ECC buffer aligns to an ECC data group boundary—the amount of data associated with a single burst of ECC bits—therefore all write commands are preferably split on ECC data group boundaries.

Write Commands with No Masking:

Write commands not spanning an entire burst of write data (for example, 8×BL×Data Path Width aligned) require an ECC read-modify-write in order to obtain sufficient data to update the ECC associated with data byte(s) within the burst. Write commands of less than a burst require a data read-modify-write in order to obtain sufficient data to merge the write data for the write. For write commands of less than 8 bytes aligned to an 8 byte boundary, this read data is also needed to obtain the minimum data to update the ECC-associated data byte. In order to verify that the read data used for calculating the new ECC is not corrupt, the ECC byte(s) to be overwritten must be verified. Single-bit errors require correction, and multi-bit errors require the new ECC to be corrupted to maintain the error recognition. Writes that span an entire ECC burst do not require the data and ECC reads since the entire location will be overwritten. The ECC components of the data words to be written are accumulated in a buffer and written at the end of the write sequence.

Command Generation:

ECC read and write command entries are generated for entry as parts of command sequences within the command queue unit 110 in cooperation with the generation of existing read and write data command entries. The following features are preferably realized in connection with this process:

-   -   Suitable ECC logic conventionally associated with out-of-band         ECC is enabled for inline ECC storage, and the same data command         generation rules may be applied for inline ECC storage. For         example, misaligned and/or masked writes generate         read-modify-write data commands.     -   ECC storage start address and length are computed based on the         data address and length.     -   ECC command sequences are atomic operations with a fixed order         of execution. ECC command sequences that cross page boundaries         are split at the page boundary, and each sequence within a page         is atomic; however, the sequences are not atomic to one another         where the page boundary is crossed.

TABLE Command Split with ECC Command Generation Summary Command in Split Unit: Rules: Read Necessarily preceded by an ECC read [ECC read, data read] is a fixed order, atomic operation Write resulting in a data Write masking supported: read-modify-write for ECC Generates an ECC read and ECC write calculation [ECC read, data read, data write, ECC write] is a fixed order, (misaligned and/or masked) or no atomic operation write mask requirement ECC writes may be executed as masked or unmasked writes Write masking unsupported: No change - no write mask option for ECC write. Write resulting in a data Each command generated by command split unit handled RMW-WR-RMW or RMW-WR individually for ECC generation. Optimal to execute a single or WR-RMW. ECC read and single ECC write. Write-single burst/Masked write Write masking supported: A masked data write will necessarily align with an 8-byte boundary, and is otherwise converted to a RMW in order to calculate ECC Generates either a masked ECC write or an ECC RMW with masked write [masked data write, masked ECC write] is a fixed order, atomic operation [read ECC, masked data write, masked ECC write] is a fixed order, atomic operation Write burst (no masking required); Write masking supported: not a complete ECC data group. Generates a masked ECC write [data write, masked ECC write] is a fixed order, atomic operation Write masking unsupported: Generates an ECC read and ECC write [read ECC, data write, ECC write] is a fixed order, atomic operation Write burst (no masking required); Generates an ECC write a complete ECC data group. [data write, ECC write] is a fixed order, atomic operation

ECC Buffer

ECC check bits for reads and writes are intermediately stored in suitable error storage unit. In the illustrated example, this is preferably implemented in the form of an ECC buffer. ECC commands access the ECC buffer for both ECC data storage and ECC data supply. Generally, various types of commands access the ECC buffer. They include:

-   -   Data writes which generate ECC bytes in the ECC generation         logic. This ECC is stored at corresponding index addresses in         the ECC buffer.     -   Data reads which source ECC bytes from the ECC buffer, and         append them to the read data prior to evaluation by the ECC         checking logic.     -   ECC writes which send ECC bytes accumulated during a data write         to inline ECC storage regions of the memory device.     -   ECC reads which store ECC bytes read from inline ECC storage         regions of the memory device in the ECC buffer.

In the illustrated embodiment, the ECC buffer is only partially utilized for most memory transactions. The ECC is preferably indexed in the ECC buffer based on the transaction address, so ECC bytes for different transactions tend to occupy different locations within the ECC buffer.

ECC buffer storage is preferably implemented as a general register storage array with a depth defined by the maximum supported column address width divided by 8 and a width defined by the DFI data width divided by 8, so as to be accessible in user data transfer widths for ECC read and write commands. For example, in order to maintain existing command boundaries, the ECC buffer is suitably sized to store the ECC associated with a page of data. (In one example: ECC buffer size=ECC to data ratio×2{circumflex over (0)} maximum column address width×data byte width=⅛×2^×2 bytes=256 bytes.)

Utilizing an ECC buffer sufficient to store the ECC bits for a complete page of data minimizes design complexity since new boundary conditions are not imposed in implementing inline ECC storage conversion, and improves performance by allowing memory transactions of maximum size to be executed without interruption from ECC operations. For memories with larger page sizes and wider data paths, the ECC buffer may be accordingly increased in size, but the resulting size and may be prohibitively large for some applications. In certain embodiments, a page size programming may be employed for optimal definition of page size to suit the ECC buffer size for certain operations or parts of the overall system, while other operations/parts of the system may continue using the actual/default page size, so as to prevent overly pessimistic timing, and the like

On an ECC read, the ECC buffer is loaded with one or more bursts of ECC read bits. The inline ECC storage start address may then be computed based on the read address and rounded to the nearest ECC data burst boundary. ECC bits are stored in the ECC buffer, preferably indexed off of the complete page address regardless of the size of the memory transaction. For ECC, the entire burst is preferably stored in the ECC buffer.

FIG. 7 schematically illustrates an example of ECC buffer indexing. As shown, for data bytes stored in a certain page of memory at column address CA [9:0]=10′h218, for burst length=8, data path=2-bytes, the data would begin loading at CA divided by 4 (divide by 8 for 8:1 ratio, multiply by 2 for data path of 2) and mask the lowest 4 bits for burst alignment—or CA [9:4]=8′h80. For a subsequent data read, the ECC buffer is indexed on an ECC data burst boundary at location 8′h86.

Read/Write Operations:

For a write operation, an ECC read may be required prior to loading the buffer with the write ECC bits. In this case, the ECC bytes for the read data and write data are merged together in the ECC buffer. Otherwise, the ECC buffer may only contain the ECC bytes generated by the write operation. The start address may be computed based on the write address and rounded to the nearest ECC data burst boundary.

The read and write pointers for indexing into the ECC buffer are preferably provided by the address translation logic. The push and pop signals for timing the movement of ECC bits and updating pointers are suitably generated by the ECC unit 300 and memory access unit 200.

For a read operation, the ECC components are read from memory in advance of the associated data components of the data word being read, so the ECC associated with the read is pulled from the ECC buffer and combined with the read data prior to execution of the ECC check function. For a write operation, the ECC components are written to memory after the associated data components, so the ECC is generated with the write command and stored in the ECC buffer. When the ECC is written, the ECC components are pulled from the ECC buffer.

FIGS. 8A and 8B schematically illustrate respective read and write data paths carried out with intermediate storage of ECC bits by the ECC buffer in accordance with one exemplary embodiment of the present invention. During a read operation, as illustrated in FIG. 8A, the strategy execution unit 120 executes to suitably manage differences between data and ECC read commands. For ECC commands, the strategy execution unit 120 transmits command and control signals to the ECC buffer 310 to either capture the ECC read bytes from the memory device or provide the ECC check bytes for incoming read data. For an ECC read from the memory device, the ECC bytes that are read are loaded into the ECC buffer upon a suitably implemented ECC control section 304 asserting a push signal. For data byte reads from the memory device, the ECC control section asserting a pop signal indicating to the ECC buffer 310 the timing for sending the ECC bytes along with the read data (from an interface gather logic section 204) to the given ECC check logic section 302. The read gather logic section 204 is suitably implemented with a DFI section 202 of any suitable type known in the art as part of the memory access interface unit 200. The read gather logic section 204 preferably captures both the bits/bytes for both data reads and ECC reads from the memory device.

The ECC control section 304 receives command and timing information from the strategy execution unit 120 and determines the start address for loading ECC during a ECC read operation and read-indexing into the ECC buffer 310 for proper alignment to the associated data read from the memory device. The ECC control section 304 generates a write index as needed to indicate where to load the ECC bytes on the ECC read, and a read index to indicate where to pop the ECC byte for the next clock of a data read. The ECC buffer 310 stores the ECC bytes for the current command.

During a write operation, as illustrated in FIG. 8B, the strategy execution unit 120 executes to suitably manage differences between data and ECC write commands. For ECC commands, the strategy execution unit 120 provides the ECC command information needed (to a multiplexing section 306) for ECC address translation and the command type for the ECC logic to properly direct the incoming command. The ECC logic executes and drives the push signal during the data write to load the generated ECC bytes into the ECC buffer and provide the pop signal to properly time the ECC write flow during the write operation. The ECC control section 304 receives command information from the strategy execution unit 120 and determines the start address for loading ECC bytes during the associated data write and write-indexing into the ECC buffer 310 for proper alignment to the associated data to written to the memory device. The write index indicates where to load the ECC bytes on the data write, and the read index indicates where to pop the ECC bytes for the next clock of a data write. The DFI section 202 sends out write data from both the normal data path and ECC write path from the ECC buffer 310.

Read-Modify-Write Operation:

A read-modify-write (RMW) transaction may employ the read and write paths illustrated in FIGS. 8A-8B. Preferably, the read gather logic 204 of the DFI section 202 executes to capture ECC read components. The captured ECC components are subsequently used to provide check data bits for a data read. This data remains in the ECC buffer 310 during a read-modify-write operation. The ECC address translation section 102 receives command information from the strategy execution unit 120 for the requisite sequence or ECC read, data read, data write, and ECC write operations of a RMW transaction. For each operation in the sequence, the address translation logic properly indexes into the ECC buffer 310. The strategy execution unit 120 provides command information for proper address translation and data steering. DFI and ECC accordingly direct the data/ECC as defined for read and write transactions and corresponding push/pop timing information.

Command Split

The inline ECC storage conversion provided by the illustrated embodiment requires each translated command sequence to include read and/or write ECC accesses as part of the sequence. An exception may be in a flush write or other such command that does not actually transfer any data.

The command split unit 100 preferably includes a state machine, suitably configured to establish the command sequences as described herein. In most cases, an inline ECC command sequence will either begin with an ECC read command or transition to an ECC write as the next state. In general, if the first command is an ECC read, the current non-inline ECC command generated in an IDLE state becomes the 2^(nd) command in the sequence. In the illustrated embodiment and application, the first command in a sequence is preferably issued in the IDLE state, obviating the need for a separate state in the state machine for the commands. Therefore a new set of states will be created as next states in the inline ECC sequence. Preferably, each command sequence defines a unique state.

TABLE Examples of Inline ECC Command Split States State Description READ Issue a read WRITE Issue a write following an ECC read for an ECC RMW sequence. RMODW_READ Issue the read for a RMODW sequence; single read, single write OPT_RMODW_RDFIRST Issue the first read for an optimized RMODW sequence SPLIT_RMODW_FIRST_READ Issue the first data read in a split RMODW sequence SPLIT_OPT_RMODW_RDFIRST Issue the first read in a RMODW sequence SPLIT_FIRST_READ Issue the first read in a split read sequence WRAP_RMODW_FIRST_READ Issue the first read in a RMODW wrap sequence WRAP_FIRST_READ Issue the first read in a wrap read sequence ECC_READ Issue an ECC read ECC_WRITE Issue an ECC write

Command split factors applicable to data and ECC are different relative to the address alignment and length of write data command, since a single aligned transfer that may be executed without masking is smaller for data than for ECC, a byte of which is associated with 8 bytes of data. The following table summarizes in this regard.

TABLE Write vs RMW based on Data Alignment, Data and ECC, Data Masking (DM) and No DM Data - No ECC - No Data - ECC - Data Alignment DM DM DM DM Unaligned to 8 byte RMW RMW RMW RMW boundary ECC data word aligned RMW RMW Write Write (8 bytes but not burst aligned) Data aligned (BLxDP) Write RMW Write Write ECC aligned (8xBLxDP) Write Write Write Write

FIGS. 9A-9C schematically illustrate how certain sample commands may be processed in the command split unit 100, with inline ECC storage based on various command property decodes. Shaded states denote newly-generated commands and states in the sequences shown.

The following table summarizes changes to received command sequences to realize command sequences compatible with an inline ECC storage configuration.

TABLE 1 Changes to Command Flow for Inline ECC Command Sequence Changes Read - no page Single ECC read preceding the data read. crossing, no wrap. Write - aligned If write DM is enabled, if the write is ECC byte aligned (address such that no RMW and length), only an ECC write is required following the data required for data, write. If no write DM, if the write is ECC data group aligned no page crossing, (address and length), only an ECC write is required following no wrap; ECC does the data write, not require RMW Write with RMW If the write is not aligned (address and length) as described in ECC Write - “Write” above, the ECC write is converted to an RMW write aligned such that with the ECC read preceding the data write and followed by an no RMW required ECC write. for data, no page crossing, no wrap; ECC does require RMW. RMW Write - no Single ECC read and write, For a non-optimized case, the ECC page boundary crossing read spans the entire length of the transaction. The ECC write writes the ECC for the entire write sequence. Optimized RMW One or two ECC reads and a single ECC write. For an optimized Write - RMW case, the ECC read only reads the ECC bits associated with the required for first Read-First and Read-Last addresses; these data commands each and/or last write form a burst command in length such that a single ECC burst but not in between, command suffices for accumulating the ECC associated with no page boundary each; reading both First and Last may take a single ECC read or crossing two ECC reads to obtain the required ECC byte(s). The ECC write writes the ECC for the entire write sequence. Split RMW Write - One ECC read and one ECC write per page. For a non-optimized same as RMW case, the ECC read only reads the ECC data associated with the write with page first and last read addresses. The ECC write writes the ECC for crossing the entire write sequence. This is done for each page in the transaction. Optimized Split One ECC read and one ECC write per page. For an optimized RMW Write - case, the ECC read only reads the ECC associated with the first same as optimized and last addresses as applicable. The ECC write writes the ECC RMW write with for the entire write sequence. This is done for each page in the page crossing transaction. In the case where the first and last data must both be read, inline ECC requires the ECC and data read for last to wait until the page associated with the data. is accessed since there is only a single ECC buffer. Split Commands - Single ECC command per page. Split commands necessarily read or write classified as reads or writes. Reads are preceded by an ECC read command crossing per page, and writes are followed by an ECC write per page. a page boundary, Both the ECC reads and writes span the entire data of the not an RMW command. Wrap RMW Write - Single ECC read and single ECC write. Wraps do not cross a wrap command page boundary, so a single read and write are required. The ECC requiring RMW for data. read and write span the entire command. Wrap with ECC Single ECC read and single ECC write. Wraps do not cross a RMW Write - page boundary, so a single read and write are required. The ECC wrap command read and write span the entire command (not shown in the requiring does not figures). require data RMW but does require RMW for ECC. Wrap Commands - Single ECC command per page. Wrap commands classified as not an RMW reads or writes. Reads are preceded by an ECC read per page, and writes are followed by an ECC write per page. Both the FCC reads and writes span the entire data of the command.

Every command's address is output from the command split unit 100 by a suitable address signal. The address is output from the split unit state machine on a command by command basis.

ECC Length Computation:

In addition to ECC address computation, ECC commands entail computation of length. The ECC command length may generally be computed based on the command address, command type, disposition within a command sequence, and other suitable system parameters. The command type, read or write, determines how the ECC length is computed. ECC reads are aligned to burst boundaries and length determines the number of bursts required. ECC writes are byte aligned since an ECC write can be on a byte granularity when write data masking is supported. The start address and length are used to determine how the command aligns to 8-byte data boundaries for writes or burst boundaries for reads, which factor into the ECC command length required.

Each ECC command's length is generated and output preferably from the state machine suitably implemented in the command split unit 100, on a command by command basis. In certain applications, the length of ECC commands may be based, for example, on such factors as:

-   -   ECC maintaining 1:8 ratio to data length.     -   ECC necessarily being read in bursts such that a single ECC read         provides the ECC for an entire ECC data group.     -   ECC reads being aligned in predetermined manner in relation to         ECC data group boundaries.     -   ECC read length being computed to read the correct number of         bursts accounting for address masking to align to an ECC burst         boundary.     -   ECC write length being computed as required for write masking         where ECC may be written on byte granularity.     -   ECC commands being specified by start address and length and         converted to the necessary reads and writes in the same way as         data commands.

ECC lengths are preferably computed for each ECC command generated by the command split unit 100, with the length computations being based on the associated command length. For each command sequence, an ECC version of the command length is computed accordingly, and an ECC version is generated for the signal indicating command length from the command split unit's state machine.

Command Queue

For Inline ECC, command sequences are necessarily executed in order, without other commands being interleaved within the sequence. Commands split on page boundaries are not atomic at the page boundary. The ECC bytes for a page of data are preferably stored contiguously in a common ECC buffer, and the buffered ECC may be compromised by another command sequence executing out of order.

The command queue unit 110 allows command ordering in three places —placement, selection, and swap. Command placement is how commands are placed coming from the command split unit 100 into the command queue unit 110 (CQ). Placement rules determine where in the CQ a command is placed. Commands are allowed to pass commands of lower priority or be reordered according to optimized command grouping, etc. when no conflicts prevent the reordering. In the illustrated embodiment, for example, a RMW command placement is restricted to the extent that an RMW cannot pass another RMW.

For Inline ECC, such command placement rules are applied only to the first command in a command sequence. The other command(s) in the sequence must be placed in the CQ entries in order immediately following the initial command in the sequence. In addition, command placement may only occur in front of the initial commands of a sequence since command interleaving is precluded, and all subsequent commands must block insertion. Since an RMW cannot pass an RMW already in the CQ, RMW's are placed behind current RMW commands.

FIG. 10 schematically illustrates an example of such command placement and selection in the CQ for inline ECC storage, in accordance with one embodiment and application of the present invention. The illustrated CQ at the instant in time shown contains a plurality of command sequences, namely Read, Split Read, Write, RMW, and Write sequences queued up in order as shown. The commands translated by the command split unit 100 are provided as a new command sequence for by an initial command 100-1 and a second command 100-2. This new command sequence may be placed in front of the already queued command sequences' initial commands only, as indicated by the arrows pointing to the possible insertion points. Placement in between commands within the existing sequences is precluded. So the initial command 100-1 in the new command sequence may be placed, subject to the placement rules, at any of the possible insertion points denoted. The second command 100-2 of the new command sequence must be placed at the entry point immediately following the initial command 100-1.

Command selection defines a window of commands in the top entries in the CQ that are evaluated as possible candidates for the next command issued to the strategy execution unit 120 from the CQ. Command selection applies predefined rules to determine which command to choose.

For Inline ECC storage, the command selection process is thereby applicable only to selecting between initial commands of candidate sequences, with no extraneous consideration needed for subsequent commands in the sequence regarding their readiness for execution. Since the selection window is generally small (typical selection size=4), selection is often limited to consideration of one or two commands.

One or more portions of the system embodiments disclosed herein may include a computer processor based implementation, the system embodiments may include a dedicated processor or processing portions of a system on chip (SOC), portions of a field programmable gate array (FPGA), or other such suitable measures, executing processor instructions for performing the functions described herein or emulating certain structures defined herein. Suitable circuits using, for example, discrete logic gates such as in an Application Specific Integrated Circuit (ASIC), Programmable Logic Array (PLA), or Field Programmable Gate Arrays (FPGA) may also be developed to perform these functions.

Although this invention has been described in connection with specific forms and embodiments thereof, it will be appreciated that various modifications other than those discussed above may be resorted to without departing from the spirit or scope of the invention as defined in the appended claims. For example, functionally equivalent elements or processes may be substituted for those specifically shown and described, certain features may be used independently of other features, and in certain cases, particular locations of the elements or processes may be reversed or interposed, all without departing from the spirit or scope of the invention as defined in the appended claims. 

What is claimed is:
 1. A system for controlling access to a memory device having adaptively split addressing of error-protected data words for memory transactions according to an inline storage configuration, comprising: an address translator executing on a processor to convert a data address associated with a received command for each of the memory transactions to an inline data address and an inline error checking address corresponding thereto, wherein: each of a plurality of data words includes a plurality of data bits stored in the memory device according to said inline data address and a plurality of error checking bits stored in the memory device according to said inline error checking address; and, a segment of error checking bits of a data word is thereby offset in address from at least one segment of data bits of the data word for storage access therewith in a common chip of the memory device; a command translator executing on a processor to convert between the received command for each memory transaction to a data access command and an error checking access command for actuating respective access operations on the memory device corresponding to the received command; and, an error checking storage section intermediately storing the error checking bits of each memory transaction responsive to execution of the error checking access command provided therefor by said command translator.
 2. The system as recited in claim 1, wherein: the memory device includes a plurality of integrated circuit chips each defining a plurality of banks forming an array of selectively addressed storage cells, the storage cells of each bank being organized in a plurality of individually accessible pages; the segment of data bits and the segment of error checking bits for the data word are respectively defined by a plurality of multi-bit data bytes and a corresponding multi-bit error correcting code (ECC) byte; and, said address translator maps the multi-bit data bytes of the data word for storage access across a plurality of the chips at said inline data address within respective ones of the chips, said address translator maps the multi-bit ECC byte of the data word for storage access at said inline error checking address offset in the common chip by a predetermined number of pages from said inline data address for at least one of the multi-bit data bytes of the data word.
 3. The system as recited in claim 2, wherein said inline error checking address is generated by said address translator to be offset by a predetermined number of banks from said inline data address in the common chip.
 4. The system as recited in claim 1, further comprising a data control portion coupled to said address translator, command translator, and error checking storage section, said data control portion being configured to carry out different types of memory transactions on the memory device, the types of memory transactions including: read, write, masked-write, and read-modify-write transactions for selectively addressed storage locations defined in the memory device; the data access command promoting one of a plurality of data access operations including: a read data operation and a write data operation; and, the error checking command prompting one of a plurality of error checking access operations including: a read error checking operation, a write error checking operation, and a masked write error checking operation.
 5. The system as recited in claim 4, wherein: said command translator is disposed within a command split unit executing to split the received command into a command sequence containing at least the data and error checking access commands ordered in sequence of execution according to the memory transaction type; a command queue unit is coupled to said command split unit for storing a plurality of commands for timely execution, the command sequence being entered in said command queue unit; and an execution strategy unit is coupled to said command queue unit, said execution strategy unit selecting the commands stored in said command queue unit for timely execution.
 6. The system as recited in claim 4, wherein said command translator generates command sequences according to the memory transaction type thereof, the command sequences each including at least the data access command and the error checking access command mutually ordered in sequence of execution according to the memory transaction type, wherein: the command sequence for a read transaction includes an error checking access command for a read error checking operation immediately followed by a data access command for a read data operation; the command sequence for a write transaction includes a data access command for a read data operation immediately followed by an error checking access command for a write error checking operation; the command sequence for a read-modify-write transaction includes an error checking access command for a read error checking operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an error checking access command for a write error checking operation; and, the command sequence for a masked-write transaction includes an error checking access command for a read error checking operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an error checking access command for a masked write error checking operation.
 7. The system as recited in claim 2, wherein a data-ECC ratio is defined by relative bit lengths of the multi-bit data byte and the multi-bit ECC byte of the data word, each bank having a designated region of pages for storing ECC bytes defined in proportion to the other pages of the bank according to the data-ECC ratio.
 8. The system as recited in claim 7, wherein said address translator executes to append a page address component of the inline data address for each data word with a predefined number of most significant bits containing a high bit value in generating the inline error checking address, the page address component being thereby shifted in bit content by the predefined number of most significant bits appended.
 9. The system as recited in claim 4, wherein: the received command is received from a master control operation; said error checking storage section includes an error checking buffer intermediately storing at least one segment of error checking bits for a data word of the memory transaction; and, the segment of error checking bits in the error checking buffer is transmitted to the memory device for storage at the inline error checking address responsive to a write error checking or masked write error checking operation based on the error checking access command, and alternatively combined with the segment of data bits read from the inline data address of the memory device for transmission back to the master control operation responsive to the read error checking operation actuated by the error checking access command.
 10. A memory controller system having adaptively split addressing for data bit and error correcting code (ECC) components of error-protected data words for memory transactions on a memory device configured for inline storage thereof, comprising: a command control portion executing on a processor to generate commands for actuating data access and ECC access operations corresponding to the memory transactions, said command control portion including: an address translation unit executing to map a data address associated with a received command for each of the memory transactions to corresponding inline data and inline ECC addresses for the memory device, wherein: each of a plurality of data words includes a plurality of data bits stored in the memory device according to said inline data address and a plurality of ECC bits stored in the memory device according to said inline ECC address; and, a segment of ECC bits of a data word is thereby offset in address from at least one segment of data bits of the data word for storage access therewith in a common chip of the memory device; a command translation unit executing to map the received command for the memory transaction to corresponding data access and ECC access commands for actuating the respective data access and ECC access operations on the memory device; a data control portion coupled to said command control portion and configured to execute the data access and ECC access operations for selectively addressed storage locations defined in the memory device according to memory transactions of different type; an error control portion coupled to said command control and data control portions for detecting error in a data segment as stored in the memory device based on the ECC bits, said error control portion including an ECC storage unit intermediately storing ECC bits of the memory transaction responsive to execution of the ECC access command provided therefor by said command translation unit.
 11. The system as recited in claim 10, wherein: the memory device includes a plurality of integrated circuit chips each defining a plurality of banks forming an array of selectively addressed storage cells, the storage cells of each bank being organized in a plurality of individually accessible pages; the segment of data bits and the segment of ECC bits for the data word are respectively defined by a plurality of multi-bit data bytes and a corresponding multi-bit ECC byte; and, said address translation unit maps the multi-bit data bytes of the data word for storage access across a plurality of the chips at said inline data address within respective ones of the chips, said address translation unit mapping the multi-bit ECC byte of the data word for storage access at said inline ECC address offset in the common chip by a predetermined number of pages from said inline data address for at least one of the multi-bit data bytes of the data word.
 12. The system as recited in claim 11, wherein said inline ECC address is generated by said address translation unit to be offset by a predetermined number of banks from said inline data address in the common chip.
 13. The system as recited in claim 12, wherein: said data control portion is configured to carry out different types of memory transactions on the memory device, including: read, write, masked-write, and read-modify-write transactions for selectively addressed storage locations defined in the memory device; the data access command is actuating one of a plurality of data access operations including: a read data operation and a write data operation; the ECC command is actuating one of a plurality of ECC access operations including: a read ECC operation, a write ECC operation, and a masked write ECC operation; and, said command translation unit generates command sequences for received commands according to the memory transaction type thereof, the command sequences each including at least the data and ECC access commands mutually ordered in sequence of execution according to the memory transaction type, the command sequences including: for a read transaction: an ECC access command for a read ECC operation immediately followed by a data access command for a read data operation; for a write transaction: a data access command for a read data operation immediately followed by an ECC access command for a write ECC operation; for a read-modify-write transaction: an ECC access command for a read ECC operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an ECC access command for a write ECC operation; and, for a masked-write transaction: an ECC access command for a read ECC operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an ECC access command for a masked write ECC operation.
 14. The system as recited in claim 11, wherein said command control portion further includes: a command queue unit storing a plurality of commands for timely execution by at least one of said data control and error control portions; an execution strategy unit coupled to said command queue unit, said execution strategy unit selectively passing the commands stored in said command queue unit to corresponding ones of said error control and data control portions for timely execution thereby; and, a command split unit executing to split the received command into a command sequence containing at least the data and ECC access commands ordered in sequence of execution according to the memory transaction type, the command sequence being entered in said command queue unit.
 15. The system as recited in claim 11, wherein: a data-ECC ratio is defined by relative bit lengths of the data byte and ECC byte of a data word, each bank having a designated region of pages for storing ECC bytes defined in proportion to the other pages of the bank according to the data-ECC ratio; and, said address translation unit executes to append a page address component of the data address for each data word with a predefined number of most significant bits containing a high bit value in mapping to the inline ECC address, the page address component being thereby shifted in bit content by the predefined number of most significant bits appended.
 16. A method for controlling access to a memory device with adaptively split addressing for data bit and error correcting code (ECC) components of error-protected data words of a memory transaction configured for inline ECC storage thereof, comprising: executing a command control portion on a processor to generate commands for data access and ECC access operations corresponding to the memory transaction, said command control portion including: executing an address translation to map a data address associated with a received command for the memory transaction to corresponding inline data and inline ECC addresses for the memory device; and, executing a command translation to map the received command for the memory transaction to corresponding data access and ECC access commands for respective ones of the data access operation and the ECC access operation on the memory device; executing a data control portion to carry out the data access and ECC access operations for selectively addressed storage locations defined in the memory device according to the memory transaction, said data control portion being executable to carry out the data access and ECC access operations for memory transactions of different type; and, executing an error control portion in cooperation with said command control and data control portions for detecting error in a data segment as stored in the memory device based on the ECC bits thereof, said error control portion intermediately storing ECC bits of the memory transaction responsive to execution of the ECC access command provided by said command translation.
 17. The method as recited in claim 16, wherein: the received command is received from a master control operation; at least one segment of ECC bits for a data word of the received command is intermediately stored in said error control portion; and, the segment of ECC bits in said error control portion is transmitted to the memory device for storage at the inline ECC address responsive to a write ECC or masked write ECC operation based on the ECC access command, and alternatively combined with the segment of data bits read from the inline data address of the memory device for transmission back to the master control operation responsive to a read ECC operation based on the ECC access command.
 18. The method as recited in claim 16, wherein: a plurality of integrated circuit chips are provided in the memory device, each defining a plurality of banks forming an array of selectively addressed storage cells, the storage cells of each bank being organized in a plurality of individually accessible pages; the segments of data and ECC bits for a data word are defined respectively by a plurality of multi-bit data bytes and a corresponding multi-bit ECC byte; the multi-bit data bytes of the data word are mapped by said address translation for storage access across a plurality of the chips at said inline data address within the respective chips, the ECC byte of the data word being mapped by said address translation for storage access at said inline ECC address defined in the common chip to be offset by a predetermined number of pages from said inline data address for at least one of the multi-bit data bytes; a data-ECC ratio is defined according to relative bit lengths of the multi-bit data byte and the multi-bit ECC byte of the data word, each bank having a designated region of pages for storing ECC bytes defined in proportion to other pages of the bank according to the data-ECC ratio; and, said address translation includes appending a page address component of the data address for the data word with a predefined number of most significant bits containing a high bit value in mapping to the inline ECC address, the page address component being thereby shifted in bit content by the predefined number of most significant bits appended for the inline ECC address.
 19. The method as recited in claim 16, wherein: said data control portion carries out different types of memory transactions on the memory device, including: read, write, masked-write, and read-modify-write transactions for selectively addressed storage locations defined in the memory device; the data access command actuates a selected one of a plurality of data access operations including: a read data operation and a write data operation; the ECC command actuates a selected one of a plurality of ECC access operations including: a read ECC operation, a write ECC operation, and a masked write ECC operation; and, said command translation portion generates command sequences for received commands according to the memory transaction type thereof, the command sequences each including at least the data and ECC access commands mutually ordered in sequence of execution according to the memory transaction type.
 20. The method as recited in claim 19, wherein, the command sequences include: for a read transaction: an ECC access command for a read ECC operation immediately followed by a data access command for a read data operation; for a write transaction: a data access command for a read data operation immediately followed by an ECC access command for a write ECC operation; for a read-modify-write transaction: an ECC access command for a read ECC operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an ECC access command for a write ECC operation; and, for a masked-write transaction: an ECC access command for a read ECC operation immediately followed in sequence by a data access command for a read data operation, a data access command for a write data operation, and an ECC access command for a masked write ECC operation. 